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| PD -93864 IRF7534D1 FETKY MOSFET & Schottky Diode Co-packaged power MOSFET and Schottky diode q Ultra Low On-Resistance MOSFET q Trench technology TM Footprint q Micro8 q Available in Tape & Reel Description q HEXFET(R) A A S G 1 8 K K D D 2 7 VDSS = -20V RDS(on) = 0.055 Schottky Vf=0.39V 3 6 4 5 T op V ie w The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications, such as cell phones, PDAs, etc. The Micro8TM package makes an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics Micro8TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -20 -4.3 -3.4 -34 1.25 0.8 10 12 1.1 -55 to + 150 Units V A W W mW/C V V/ns C Thermal Resistance Parameter RJA Max. Units 100 C/W Maximum Junction-to-Ambient Notes: Repetitive rating - pulse width limited by max. junction temperature (see Fig. 9) ISD -1.2A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s - duty cycle 2% When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com 1 3/22/00 IRF7534D1 MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 --- --- -0.6 2.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- --- --- --- --- --- 10 2.1 2.5 10 46 60 64 1066 402 125 Max. Units Conditions --- V VGS = 0V, ID = -250A 0.055 VGS = -4.5V, ID = -4.3A 0.105 VGS = -2.5V, ID = -3.4A -1.2 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -0.8A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 15 ID = -3A 3.1 nC VDS = -10V 3.7 VGS = -5V --- VDD = -10V --- ID = -2A ns --- RG = 6.0 --- RD = 5, --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz MOSFET Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) Body Diode Forward Voltage Reverse Recovery Time (Body Diode) Reverse Recovery Charge Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Min. Typ. Max. Units Conditions --- --- -1.3 A --- --- -34 --- --- -1.2 V TJ = 25C, IS = -1.6A, VGS = 0V --- 54 82 ns TJ = 25C, IF = -2.5A --- 41 61 nC di/dt = 100A/s Max. Units 1.9 A 1.4 120 11 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 25C TA = 70C See Fig.13 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 20V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR Schottky Diode Maximum Ratings IF(av) I SM Schottky Diode Electrical Specifications VFM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.02 mA 8 92 pF 3600 V/ s IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com IRF7534D1 Power MOSFET Characteristics 100 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 10 10 1 1 -1.50V -1.50V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -4.3A -I D , Drain-to-Source Current (A) 1.5 TJ = 150 C 10 1.0 0.5 1 1.0 V DS = -15V 20s PULSE WIDTH 2.0 3.0 4.0 5.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7534D1 Power MOSFET Characteristics 1600 15 -VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd ID = -4.3A -4.5A 12 C, Capacitance (pF) 1200 Ciss VDS =-10V 9 800 6 400 Coss Crss 0 1 10 100 3 0 0 4 8 12 16 20 24 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us -ID , Drain Current (A) I 10 10 100us TJ = 150 C TJ = 25 C 1 1ms 1 10ms 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 0.1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7534D1 Power MOSFET Characteristics RDS (on) , Drain-to-Source On Resistance ( ) RDS(on) , Drain-to -Source On Resistance ( ) 0.12 0.10 0.10 VGS = -2.5V 0.08 0.08 0.06 0.06 VGS = -4.5V ID = -4.3A 0.04 0 5 10 15 20 -I D , Drain Current (A) 0.04 2.0 3.0 4.0 5.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 9. Typical On-Resistance Vs. Drain Current Fig 10. Typical On-Resistance Vs. Gate Voltage 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7534D1 Schottky Diode Characteristics 10 100 10 TJ = 150C 125C Reverse Current - IR (mA) 1 100C 75C 50C 0.1 0.01 25C 0.001 In sta nta n eo us F o rw a rd C urre n t - I F (A) 0.0001 0 4 8 12 16 20 ) Reverse Voltage - V R (V) 1 T J = 1 50 C T J = 1 25 C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage A llow ab le A m b ie nt T e m p era tu re - (C ) T J = 2 5C 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 D D D D D = 3/4 = 1/2 = 1/3 = 1/4 = 1/5 DC V r = 20 V R t hJA = 1 00C /W Sq uare wave 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage D ro Forw a rd Vo lta ge Dropp --VFF(V)(V ) VM A Fig. 12 -Typical Forward Voltage Drop Characteristics A v e ra ge F o rw ard C urren t - I F(AV ) (A ) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7534D1 Package Outline Micro8TM Outline TM Dimensions are shown in millimeters (inches) LE AD A S S IG N M E N TS D -B3 DDDD 8765 3 E -A1234 SSSG S1 G 1 S 2 G 2 8765 H 0.25 (.010) M A M S IN G LE 1234 D UAL 1234 D 1 D 1 D 2 D2 8765 D IM IN C H E S M IN MAX M IL LIM E TE R S M IN MAX A A1 B C D e e1 E H L .0 36 .0 04 .0 10 .0 05 .1 16 .044 .008 .014 .0 07 .1 20 0 .9 1 0 .1 0 0 .2 5 0 .13 2 .95 1 .11 0 .20 0 .36 0.18 3.05 .025 6 B A SIC .012 8 B A SIC .1 16 .1 88 .016 0 .120 .1 98 .0 26 6 0.6 5 BA S IC 0.3 3 BA S IC 2.9 5 4 .78 0 .4 1 0 3 .0 5 5.03 0 .6 6 6 e 6X e1 A -CB 8X 0.08 (.003) M A1 C AS BS 0.10 (.004) L 8X C 8X RE C O M M E N D E D FO O T P RIN T 1.04 ( .041 ) 8X 0.38 8X ( .015 ) 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) NO TES : 1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H . 0.65 6X ( .0256 ) Part Marking Information Micro8TM TM D A T E C O D E (YW W ) A Y = LA S T D IG IT O F YE A R W W = W EEK E X AM PLE : T H IS IS A N IR F 7501 451 7501 PART NUMBER TO P www.irf.com 7 IRF7534D1 Tape & Reel Information Micro8TM TM Dimensions are shown in millimeters (inches) T ER M IN A L N U M B E R 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F E E D D IR EC T IO N N O TE S : 1 . O U T L IN E C O N FO R M S T O E IA -4 81 & E IA -5 4 1 . 2 . C O N TR O L L IN G D IM E N S IO N : M IL LIM E T E R . 330.00 (12.992) M AX. 14.40 ( .566 ) 12.40 ( .488 ) NO TES : 1. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T E R . 2. O U T LIN E C O N F O R M S T O E IA -481 & E IA -541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252 7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/2000 8 www.irf.com |
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